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october 2010 doc id 18059 rev 1 1/13 13 STH250N55F3-6 n-channel 55 v, 2.2 m , 180 a, h2pak stripfet? iii power mosfet features ultra low on-resistance 100% avalanche tested application switching applications description this n-channel stripfet? iii power mosfet technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. figure 1. internal schematic diagram order code v dss r ds(on) max. i d pw STH250N55F3-6 55 v 2.6 m 180 a (1) 1. value limited by package 300 w h 2 pak-6l table 1. device summary order code marking package packaging STH250N55F3-6 250n55f3 h2pak tape and reel www.st.com
contents STH250N55F3-6 2/13 doc id 18059 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STH250N55F3-6 electrical ratings doc id 18059 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 55 v v gs gate-source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25 c 180 a i d (1) drain current (continuous) at t c =100 c 160 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 720 a p tot total dissipation at t c = 25 c 300 w derating factor 2.0 w/c dv/dt (3) 3. i sd 120 a, di/dt 900 a/s, v dd v (br)dss , t j t jmax peak diode recovery voltage slope 11 v/ns e as (4) 4. starting tj = 25 c, i d = 60 a, v dd = 40 v (see figure 16 and figure 17) single pulse avalanche energy 1000 mj t j t stg operating junction temperature storage temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 0.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board, on 1inch2, 2oz cu. thermal resistance junc tion-ambient max 35 c/w
electrical characteristics STH250N55F3-6 4/13 doc id 18059 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,@125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 , i d = 60 a 2.2 2.6 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 6800 1450 15 - pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 27.5 v, i d = 60 a r g =4.7 v gs = 10 v (see figure 13 , figure 18 ) - 25 150 110 50 - ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44 v, i d = 120 a, v gs = 10 v, (see figure 14 ) - 100 30 26 - nc nc nc
STH250N55F3-6 electrical characteristics doc id 18059 rev 1 5/13 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 180 720 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =120 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =120 a, di/dt = 100 a/s, v dd = 35 v, tj=150 c (see figure 15 ) - 60 0.11 3.5 ns c a
electrical characteristics STH250N55F3-6 6/13 doc id 18059 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms ms 4j?# 4c?# 3ingle pulse !-v 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp s ingle p u l s e =0.5 2 8 0tok 2 $3on ) $ ! m/hm 6 '3 6 !-v
STH250N55F3-6 electrical characteristics doc id 18059 rev 1 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics
test circuits STH250N55F3-6 8/13 doc id 18059 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STH250N55F3-6 package mechanical data doc id 18059 rev 1 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 7. h2pak-6 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 e 0.45 0.60 f 0.50 0.70 h 10.00 10.40 h1 7.80 8.20 l 14.75 15.25 l1 1.27 1.40 l2 4.35 4.95 l3 7.45 7.85 l4 1.5 1.75 m 1.90 2.50 r 0.20 0.60 v0 8
package mechanical data STH250N55F3-6 10/13 doc id 18059 rev 1 figure 19. h2pak-6 drawing figure 20. h2pak-6 recommended footprint (dimensions in mm)
STH250N55F3-6 packaging mechanical data doc id 18059 rev 1 11/13 5 packaging mechanical data figure 21. h2pak-6 tape and reel dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c 12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 ba s e qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e 1.65 1. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t 0.25 0. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
revision history STH250N55F3-6 12/13 doc id 18059 rev 1 6 revision history table 8. revision history date revision changes 01-oct-2010 1 first release
STH250N55F3-6 doc id 18059 rev 1 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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